Charged EVs | Qorvo says its new SiC FET product line has best-in-class figures of benefit for on-resistance

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Radio frequency expertise firm Qorvo (previously UnitedSiC) has introduced a brand new SiC Discipline Impact Transistor (FET) product line, which it says has best-in-class figures of benefit for on-resistance. The FET is designed for the 800 V bus architectures within the onboard chargers of EVs in addition to industrial battery chargers, industrial energy provides, DC/DC photo voltaic inverters, welding machines, uninterruptible energy provides and induction heating functions.

The UF4C/SC is a 1,200 V FET product line. “Increasing our 1,200 V vary with higher-performance Gen 4 choices permits us to raised serve the engineers who’re transferring their bus designs to 800 V,” mentioned Chief Engineer of Energy Gadgets for UnitedSiC/Qorvo Anup Bhalla. “In electrical autos, this transfer to increased voltages is inevitable and these new units, with 4 totally different RDS(on) courses, assist designers choose the very best SiC selection for each design.”

The brand new FETs can be found in 23-, 30-, 53- and 70-milliohm RDS(on) variations. Every is housed in a 4-lead kelvin supply TO-247 package deal, and the 53- and 70-milliohm variations are additionally obtainable in a TO-247 3-lead package deal. The corporate says, “This collection of elements have glorious reliability, based mostly on their well-managed thermal efficiency, which is a results of a complicated silver-sinter die connect and superior wafer-thinning course of.”

The brand new line is included within the firm’s FET-Jet Calculator on-line design software, and all variations are presently obtainable from licensed distributors.

Supply: Qorvo


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