Charged EVs | Renesas Electronics launches next-gen IGBT for EV inverters


Semiconductor producer Renesas Electronics has launched a brand new era of IGBTs. It’s a part of the AE product line, and a model with a 750 V stand up to voltage and 300 A is on the market now.

The AE5 is a silicon IGBT with an working junction temperature vary from -40° to 175° C and an on-voltage Vce of 1.3 V.

In response to the corporate, the AE5 “allows a discount in inverter energy losses, enhancing energy effectivity by as much as 6% in comparison with the present AE4 course of on the identical present density, permitting EVs to drive longer distances and use fewer batteries.” Renesas additionally says the AE5 gives “10% increased present density in comparison with standard merchandise and small chip dimension (100 mm2/300 A) optimized for low energy losses and excessive enter resistance.”

The AE5 will likely be mass-produced on the corporate’s 200 and 300 mm wafer traces in Naka, Japan beginning within the first half of 2023 and starting within the first half of 2024 at its new 300 mm wafer lab in Kofu, Japan.

The corporate says it plans so as to add the AE5 to a few of its kits, together with the xEV Inverter Reference Resolution motor-management equipment, its xEV Inverter Equipment and its xEV Inverter Utility Mannequin and Software program equipment.

“With the newest units quickly to be in mass manufacturing, we’re offering optimum options and value efficiency for mid-range EV inverters which can be anticipated to develop quickly sooner or later,” says VP of Renesas’s Energy System Enterprise Division Katsuya Konishi.

Supply: Renesas Electronics


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